Bashouti, Muhammad Y. Yousefi, Peyman Ristein, Jürgen Christiansen, Silke H. Electronic Properties of Si–H<sub><i>x</i></sub> Vibrational Modes at Si Waveguide Interface Attenuated total reflectance (ATR) and X-ray photoelectron spectroscopy in suite with Kelvin probe were conjugated to explore the electronic properties of Si–H<sub><i>x</i></sub> vibrational modes by developing Si waveguide with large dynamic detection range compared with conventional IR. The Si 2p emission and work-function related to the formation and elimination of Si–H<sub><i>x</i></sub> bonds at Si surfaces are monitored based on the detection of vibrational mode frequencies. A transition between various Si–H<sub><i>x</i></sub> bonds and thus related vibrational modes is monitored for which effective momentum transfer could be demonstrated. The combination of the aforementioned methods provides for results that permit a model for the kinetics of hydrogen termination of Si surfaces with time and advanced surface characterizing of hybrid-terminated semiconducting solids. vibrational mode frequencies;ATR;Si Waveguide InterfaceAttenuated;IR;Si 2 p emission;Si surfaces 2015-12-17
    https://acs.figshare.com/articles/journal_contribution/Electronic_Properties_of_Si_H_sub_i_x_i_sub_Vibrational_Modes_at_Si_Waveguide_Interface/2054268
10.1021/acs.jpclett.5b01918.s001