10.1021/acs.jpclett.5b00621.s001
Alina
M. Schimpf
Alina
M.
Schimpf
Jeffrey D. Rinehart
Jeffrey D.
Rinehart
Stefan
T. Ochsenbein
Stefan
T.
Ochsenbein
Daniel R. Gamelin
Daniel R.
Gamelin
Charge-State Control of Mn<sup>2+</sup> Spin Relaxation
Dynamics in Colloidal <i>n</i>‑Type Zn<sub>1–<i>x</i></sub>Mn<sub><i>x</i></sub>O Nanocrystals
American Chemical Society
2015
exchange interactions
model systems
material
dynamic
future applications
technology
relaxation rates
introduction
delocalized charge carriers
nanocrystal
semiconductor nanostructures
conduction band electrons
Mn
conduction band electron
Zn
DMS nanostructures
relaxation pathway
2015-12-17 08:08:42
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Charge_State_Control_of_Mn_sup_2_sup_Spin_Relaxation_Dynamics_in_Colloidal_i_n_i_Type_Zn_sub_1_i_x_i_sub_Mn_sub_i_x_i_sub_O_Nanocrystals/2050425
Colloidal diluted magnetic semiconductor
(DMS) nanocrystals are
model systems for studying spin effects in semiconductor nanostructures
with relevance to future spin-based information processing technologies.
The introduction of excess delocalized charge carriers into such nanocrystals
turns on strong dopant–carrier magnetic exchange interactions,
with important consequences for the physical properties of these materials.
Here, we use pulsed electron paramagnetic resonance (pEPR) spectroscopy
to probe the effects of excess conduction band electrons on the spin
dynamics of colloidal Mn<sup>2+</sup>-doped ZnO nanocrystals. Mn<sup>2+</sup> spin–lattice relaxation is strongly accelerated by
the addition of even one conduction band electron per Zn<sub>1–<i>x</i></sub>Mn<sub><i>x</i></sub>O nanocrystal, attributable
to the introduction of a new exchange-based Mn<sup>2+</sup> spin relaxation
pathway. A kinetic model is used to describe the enhanced relaxation
rates, yielding new insights into the spin dynamics and electronic
structures of these materials with potential ramifications for future
applications of DMS nanostructures in spin-based technologies.