10.1021/acsami.0c01781.s001
Yan Lei
Yan
Lei
Jie Luo
Jie
Luo
Xiaogang Yang
Xiaogang
Yang
Tuo Cai
Tuo
Cai
Ruijuan Qi
Ruijuan
Qi
Longyan Gu
Longyan
Gu
Zhi Zheng
Zhi
Zheng
Thermal
Evaporation of Large-Area SnS<sub>2</sub> Thin
Films with a UV-to-NIR Photoelectric Response for Flexible Photodetector
Applications
American Chemical Society
2020
Flexible Photodetector Applications
film
nanosheet
performance
post-thermal annealing route
component
UV-to-NIR Photoelectric Response
future wearable photoelectric
SnS 2
Large-Area SnS 2
crystal structure analysis
2020-05-22 22:29:21
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Thermal_Evaporation_of_Large-Area_SnS_sub_2_sub_Thin_Films_with_a_UV-to-NIR_Photoelectric_Response_for_Flexible_Photodetector_Applications/12361013
In addition to device
flexibility, the retentivity performance
of photoelectric materials after an extreme reverse-bending process
is intrinsically important and desirable for next-generation advanced
flexible optoelectronics. In this work, we designed and fabricated
large-area flexible SnS<sub>2</sub> thin films with a novel nanosheet/amorphous
blended structure to achieve an outstanding flexible photoelectric
performance via a facile evaporation and post-thermal annealing route.
Crystal structure analysis showed that the obtained SnS<sub>2</sub> thin films were constructed with nanosheets oriented parallel to
the substrate which were surrounded and connected by the amorphous
component with a smooth surface. This nanosheet/amorphous blended
structure allowed extreme bending because of the adhesive and strain-accommodation
effect that arises from the amorphous components. The assembled SnS<sub>2</sub> flexible photodetectors can bear a small bending radius as
low as 1 mm for over 3000 bending–flatting cycles without a
drastic performance decay. In particular, over 90% of the initial
photoelectric responsivity (40.8 mA/W) was maintained even after 1000
bending–flatting cycles. Moreover, the SnS<sub>2</sub> thin
film can convert photons to photocurrent over a wide spectral range
from ultraviolet to near infrared. These unique characteristics indicate
that the strategy used in this work is attractive for the development
of future wearable photoelectric and artificial intelligence applications.