10.1021/acsami.0c01781.s001 Yan Lei Yan Lei Jie Luo Jie Luo Xiaogang Yang Xiaogang Yang Tuo Cai Tuo Cai Ruijuan Qi Ruijuan Qi Longyan Gu Longyan Gu Zhi Zheng Zhi Zheng Thermal Evaporation of Large-Area SnS<sub>2</sub> Thin Films with a UV-to-NIR Photoelectric Response for Flexible Photodetector Applications American Chemical Society 2020 Flexible Photodetector Applications film nanosheet performance post-thermal annealing route component UV-to-NIR Photoelectric Response future wearable photoelectric SnS 2 Large-Area SnS 2 crystal structure analysis 2020-05-22 22:29:21 Journal contribution https://acs.figshare.com/articles/journal_contribution/Thermal_Evaporation_of_Large-Area_SnS_sub_2_sub_Thin_Films_with_a_UV-to-NIR_Photoelectric_Response_for_Flexible_Photodetector_Applications/12361013 In addition to device flexibility, the retentivity performance of photoelectric materials after an extreme reverse-bending process is intrinsically important and desirable for next-generation advanced flexible optoelectronics. In this work, we designed and fabricated large-area flexible SnS<sub>2</sub> thin films with a novel nanosheet/amorphous blended structure to achieve an outstanding flexible photoelectric performance via a facile evaporation and post-thermal annealing route. Crystal structure analysis showed that the obtained SnS<sub>2</sub> thin films were constructed with nanosheets oriented parallel to the substrate which were surrounded and connected by the amorphous component with a smooth surface. This nanosheet/amorphous blended structure allowed extreme bending because of the adhesive and strain-accommodation effect that arises from the amorphous components. The assembled SnS<sub>2</sub> flexible photodetectors can bear a small bending radius as low as 1 mm for over 3000 bending–flatting cycles without a drastic performance decay. In particular, over 90% of the initial photoelectric responsivity (40.8 mA/W) was maintained even after 1000 bending–flatting cycles. Moreover, the SnS<sub>2</sub> thin film can convert photons to photocurrent over a wide spectral range from ultraviolet to near infrared. These unique characteristics indicate that the strategy used in this work is attractive for the development of future wearable photoelectric and artificial intelligence applications.