Submicrometer Resolution
Hyperspectral Quantum Rod
Thermal Imaging of Microelectronic Devices
Bahar Öner
James W. Pomeroy
Martin Kuball
10.1021/acsaelm.9b00575.s001
https://acs.figshare.com/articles/journal_contribution/Submicrometer_Resolution_Hyperspectral_Quantum_Rod_Thermal_Imaging_of_Microelectronic_Devices/11608341
The
trend of electronic device miniaturization, from
the microscale
to the nanoscale, presents a temperature measurement challenge. The
available techniques have limitations in terms of either resolution,
calibration, acquisition time, or equipment cost. Here we demonstrate
a thermography technique called hyperspectral quantum rod thermal
imaging (HQTI), which exploits temperature-dependent photoluminescence
(PL) emission of quantum rods to obtain the surface temperature map
of a biased electronic device, with a straightforward calibration.
This method uses relatively simple, low-cost equipment, while achieving
submicrometer spatial resolution. This technique is demonstrated by
measuring the thermal map of a direct current (dc) operated gallium
nitride (GaN) high electron mobility transistor (HEMT), achieving
a temperature precision of ∼4 °C and an ∼700–800
nm estimated lateral optical resolution. This is a versatile method
for measurement both in submicrometer scale regions of interest and
of larger areas in the hundreds of micrometers range.
2020-01-14 22:44:47
temperature precision
equipment cost
Microelectronic Devices
surface temperature map
hyperspectral quantum rod
electron mobility transistor
HQTI
temperature measurement challenge
calibration
micrometers range
submicrometer scale regions
method
PL
acquisition time
device miniaturization
Submicrometer Resolution Hyperspectral Quantum Rod
thermography technique
HEMT
gallium nitride
quantum rods
exploits temperature-dependent photoluminescence