Submicrometer Resolution Hyperspectral Quantum Rod Thermal Imaging of Microelectronic Devices Bahar Öner James W. Pomeroy Martin Kuball 10.1021/acsaelm.9b00575.s001 https://acs.figshare.com/articles/journal_contribution/Submicrometer_Resolution_Hyperspectral_Quantum_Rod_Thermal_Imaging_of_Microelectronic_Devices/11608341 The trend of electronic device miniaturization, from the microscale to the nanoscale, presents a temperature measurement challenge. The available techniques have limitations in terms of either resolution, calibration, acquisition time, or equipment cost. Here we demonstrate a thermography technique called hyperspectral quantum rod thermal imaging (HQTI), which exploits temperature-dependent photoluminescence (PL) emission of quantum rods to obtain the surface temperature map of a biased electronic device, with a straightforward calibration. This method uses relatively simple, low-cost equipment, while achieving submicrometer spatial resolution. This technique is demonstrated by measuring the thermal map of a direct current (dc) operated gallium nitride (GaN) high electron mobility transistor (HEMT), achieving a temperature precision of ∼4 °C and an ∼700–800 nm estimated lateral optical resolution. This is a versatile method for measurement both in submicrometer scale regions of interest and of larger areas in the hundreds of micrometers range. 2020-01-14 22:44:47 temperature precision equipment cost Microelectronic Devices surface temperature map hyperspectral quantum rod electron mobility transistor HQTI temperature measurement challenge calibration micrometers range submicrometer scale regions method PL acquisition time device miniaturization Submicrometer Resolution Hyperspectral Quantum Rod thermography technique HEMT gallium nitride quantum rods exploits temperature-dependent photoluminescence