10.1021/acsphotonics.9b00616.s001
Ruoxi Wang
Ruoxi
Wang
Michio Ikezawa
Michio
Ikezawa
Yoshiki Sakuma
Yoshiki
Sakuma
Hiroyuki Takeda
Hiroyuki
Takeda
Naoki Ikeda
Naoki
Ikeda
Yoshimasa Sugimoto
Yoshimasa
Sugimoto
Kazuaki Sakoda
Kazuaki
Sakoda
Yuuta Yamada
Yuuta
Yamada
Yasuaki Masumoto
Yasuaki
Masumoto
Enhanced Spontaneous Emission Rates for Single Isoelectronic
Luminescence Centers in Photonic Crystal Cavities
American Chemical Society
2020
Single Isoelectronic Luminescence Centers
L 3 defects
lifetime
Two-dimensional photonic crystal slabs
Photonic Crystal Cavities Purcell effect enhancement
photonic crystal cavity
emission rates
nitrogen delta-doped GaAs
isoelectronic trap single-photon emitters
nitrogen luminescence centers
Enhanced Spontaneous Emission Rates
2020-01-13 19:33:53
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Enhanced_Spontaneous_Emission_Rates_for_Single_Isoelectronic_Luminescence_Centers_in_Photonic_Crystal_Cavities/11593914
Purcell
effect enhancement of spontaneous emission rates is demonstrated
for isoelectronic trap single-photon emitters. Two-dimensional photonic
crystal slabs with L3 defects were fabricated in nitrogen delta-doped
GaAs. Photoluminescence spectra of each photonic crystal cavity had
a series of sharp and bright lines arising from individual nitrogen
luminescence centers, which was confirmed by Hanbury-Brown and Twiss
measurements. The emission rates of these lines depended on cavity
detuning, indicating a resonant character of the enhancement. The
observed emission lifetime in the cavity was 400 ps, which would be
the shortest lifetime reported so far for luminescence centers in
GaAs.