10.1021/acsphotonics.9b00616.s001 Ruoxi Wang Ruoxi Wang Michio Ikezawa Michio Ikezawa Yoshiki Sakuma Yoshiki Sakuma Hiroyuki Takeda Hiroyuki Takeda Naoki Ikeda Naoki Ikeda Yoshimasa Sugimoto Yoshimasa Sugimoto Kazuaki Sakoda Kazuaki Sakoda Yuuta Yamada Yuuta Yamada Yasuaki Masumoto Yasuaki Masumoto Enhanced Spontaneous Emission Rates for Single Isoelectronic Luminescence Centers in Photonic Crystal Cavities American Chemical Society 2020 Single Isoelectronic Luminescence Centers L 3 defects lifetime Two-dimensional photonic crystal slabs Photonic Crystal Cavities Purcell effect enhancement photonic crystal cavity emission rates nitrogen delta-doped GaAs isoelectronic trap single-photon emitters nitrogen luminescence centers Enhanced Spontaneous Emission Rates 2020-01-13 19:33:53 Journal contribution https://acs.figshare.com/articles/journal_contribution/Enhanced_Spontaneous_Emission_Rates_for_Single_Isoelectronic_Luminescence_Centers_in_Photonic_Crystal_Cavities/11593914 Purcell effect enhancement of spontaneous emission rates is demonstrated for isoelectronic trap single-photon emitters. Two-dimensional photonic crystal slabs with L3 defects were fabricated in nitrogen delta-doped GaAs. Photoluminescence spectra of each photonic crystal cavity had a series of sharp and bright lines arising from individual nitrogen luminescence centers, which was confirmed by Hanbury-Brown and Twiss measurements. The emission rates of these lines depended on cavity detuning, indicating a resonant character of the enhancement. The observed emission lifetime in the cavity was 400 ps, which would be the shortest lifetime reported so far for luminescence centers in GaAs.